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25 Remote Warehouse Electricity- General Electricity

Fundamentals of III-V Devices: Hbts, Mesfets, and Hfets/Hemts

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Fundamentals of III-V Devices: Hbts, Mesfets, and Hfets/Hemts Cover

 

Synopses & Reviews

Publisher Comments:

A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features, including:

* An introductory chapter on the basic properties, growth process, and device physics of III-V materials

* Coverage of both dc and high-frequency models, integrating aspects of device physics and circuit design

* A discussion of transistor fabrication and device comparison

* 55 worked-out examples illustrating design considerations for a given application

* 215 figures and end-of-chapter practice problems

* Appendices listing parameters for various materials and transistor types

Book News Annotation:

After an introductory chapter on basic properties and device physics, this textbook covers the dc and high-frequency operations of the major semiconductor devices based on III-V materials<-- >heterojunction bipolar transistors (HBTs), metal-semiconductor field- effect transistors (MESFETs), and heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). Annotation c. by Book News, Inc., Portland, OR (booknews@booknews.com)

Synopsis:

An introductory guide to heterojunction bipolar and field effect transistors, this handbook addresses the industry's growing need for faster, low-powered devices for use in cellular and wireless communications. These devices replace silicon bipolar transistors, promising superior performance in less time.

Synopsis:

* Appendices listing parameters for various materials and transistor types

About the Author

WILLIAM LIU is a senior member of the technical staff at Texas Instruments, where he has worked since obtaining his PhD in electrical engineering from Stanford University in 1991. Dr. Liu has published numerous papers, reviews, and chapter contributions on HBTs. He holds thirteen U.S. patents on device and circuit design in various HBT technologies. He is a senior member of the IEEE.

Table of Contents

Basic Properties and Device Physics of III-V Materials.

Two-Terminal Heterojunction Devices.

HBT D.C. Characteristics.

HBT High-Frequency Properties.

FET D.C. Characteristics.

FET High-Frequency Properties.

Transistor Fabrication and Device Comparison.

Appendices.

Index.

Product Details

ISBN:
9780471297000
Author:
Liu, William
Publisher:
Wiley-Interscience
Location:
New York
Subject:
Engineering - Electrical & Electronic
Subject:
Electronic apparatus and appliances
Subject:
Electronics - Circuits - VLSI
Subject:
Electronics - Transistors
Subject:
Field effect transistors
Subject:
Bipolar transistors
Subject:
Metal semiconductor field-effect transistors.
Subject:
Modulation-doped field-effect transistors.
Subject:
Electricity
Subject:
Components & Devices
Subject:
Electricity-General Electricity
Copyright:
Edition Description:
Includes bibliographical references and index.
Publication Date:
April 1999
Binding:
HARDCOVER
Grade Level:
Professional and scholarly
Language:
English
Illustrations:
Yes
Pages:
520
Dimensions:
9.66x6.46x1.20 in. 1.85 lbs.

Related Subjects


Science and Mathematics » Chemistry » Biochemistry
Science and Mathematics » Electricity » General Electricity
Science and Mathematics » Electricity » General Electronics

Fundamentals of III-V Devices: Hbts, Mesfets, and Hfets/Hemts New Hardcover
0 stars - 0 reviews
$206.95 In Stock
Product details 520 pages Wiley-Interscience - English 9780471297000 Reviews:
"Synopsis" by , An introductory guide to heterojunction bipolar and field effect transistors, this handbook addresses the industry's growing need for faster, low-powered devices for use in cellular and wireless communications. These devices replace silicon bipolar transistors, promising superior performance in less time.
"Synopsis" by , * Appendices listing parameters for various materials and transistor types
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