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Mosfet Modeling With Spice (97 Edition)

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Mosfet Modeling With Spice (97 Edition) Cover

 

Synopses & Reviews

Please note that used books may not include additional media (study guides, CDs, DVDs, solutions manuals, etc.) as described in the publisher comments.

Publisher Comments:

This book will help CMOS circuit designers make the best possible use of SPICE models, and will prepare them for new models that may soon be introduced. Introduces SPICE modeling and its use in CMOS circuit design. Presents the formalism of model building and the semiconductor physics of MOS structures. Covers each important SPICE model, showing how to choose the appropriate model. Discusses the popular HSPICE Level 28, as well as Levels 1-3, BSIM 1-3, and MOS Model 9. Presents techniques for accounting for systematic process variations. Describes new model candidates, including the Power-Lane Model, the PCIM Model, and the EKV Model. Includes extensive examples throughout. Practicing engineers and scientists in the semiconductor industry; engineering faculty and students.

Book News Annotation:

Covers all the field-effect transistor (FET) models used in mainstream versions of SPICE, providing a handy reference for the practicing circuit designer. Begins with a discussion of the SPICE circuit simulation environment and the basic physics of semiconductor devices, followed by descriptions of the major FET models: Levels 1,2, and 3; BSIM, BSIM2, and BSIM3; HSPICE Level 28; and MOS Model 9. Following these specifics, device capacitance, process variations, and the correlation of various models with specific hardware are discussed.
Annotation c. Book News, Inc., Portland, OR (booknews.com)

Table of Contents

 1. SPICE Modeling and the Dominance of CMOS Technology.

 2. SPICE Modeling and the Formalism of Model Building.

 3. The Semiconductor Physics of MOS Structures.

 4. A Comparison of Analytical and Numerical Results.

 5. The Level 1 Model.

 6. The Level 2 Model.

 7. The Level 3 Model.

 8. BSIM.

 9. HSPICE Level 28.

10. BSIM2.

11. BSIM3.

12. MOS Model 9.

13. The Active Device Capacitance.

14. Accounting for Systematic Process Variations.

15. Circuit Level Correlation of Models and Hardware.

16. New Model Candidates.

17. The Future of Device Models for Circuit Simulation.

APPENDICES.

 A. An Executive Summary of the Various Models.

 B. Channel Length and Width.

 C. The Final Model Equations.

 D. The Extracted HSPICE Level 28 Model.

 E. The Binned BSIM2 Model.

INDEX.

Product Details

ISBN:
9780132279352
Author:
Foty, Daniel P.
Author:
Foty, D.
Author:
Foty, Daniel P.
Publisher:
Prentice Hall
Location:
Upper Saddle River, NJ :
Subject:
Engineering - Electrical & Electronic
Subject:
Electronics - General
Subject:
Electronics - Circuits - Integrated
Subject:
Electronics - Semiconductors
Subject:
Computer simulation
Subject:
Metal oxide semiconductors, Complementary
Subject:
Metal oxide semiconductor field-effect transistors.
Subject:
Metal oxide semiconductor field-effect transistors -- Computer simulation.
Subject:
SPICE
Subject:
Metal oxide semiconductor field-effect transi
Subject:
Electricity
Subject:
Metal oxide semiconductor field-
Subject:
Electricity-General Electronics
Copyright:
Edition Description:
Trade paper
Series:
Prentice Hall Modern Semiconductor Design Series'Sub Series: Prentice Hall Signal Integrity Library
Publication Date:
December 1996
Binding:
TRADE PAPER
Grade Level:
Professional and scholarly
Language:
English
Illustrations:
Yes
Pages:
653
Dimensions:
9 x 7 x 1.3 in 925 gr

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Science and Mathematics » Electricity » General Electricity
Science and Mathematics » Electricity » General Electronics

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