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Other titles in the Computer Engineering series:

Devices for Integrated Circuits : Silicon III - V Compound Semiconductors (99 Edition)

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Devices for Integrated Circuits : Silicon III - V Compound Semiconductors (99 Edition) Cover

 

Synopses & Reviews

Please note that used books may not include additional media (study guides, CDs, DVDs, solutions manuals, etc.) as described in the publisher comments.

Publisher Comments:

A detailed introduction of the Si and III-V compound semiconductors As you read through this text, you’ll gain a thorough understanding of the device physics of the Si and III-V compound semiconductors used in integrated circuits. The device physics of pn junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs) are also developed. And the physical understanding of the material is emphasized throughout, with important equations being derived from basic physical concepts. Basic concepts from quantum and statistical mechanics are used to describe electrons and holes in semiconductors. Carrier transport and recombination processes are explained in detail and are applied to the description of the pn junction. And the physics of the semiconductor devices are related to the parameters used in Spice, which are illustrated using PSpice examples and problems. Unique features of the text:
  • The physics of semiconductor devices is related to the parameters used in Spice, and detailed instructions are included on PSpice.
  • Circuit applications are given to illustrate the use of the devices and to provide a foundation for subsequent topics in electronic circuits.
  • Includes coverage of topics such as the inversion layer thickness, drain current flow in field-effect transistors after pinch off, and the subthreshold current in MOSFETs.
  • Figures and examples based on realistic device parameters are used to illustrate important concepts.

Book News Annotation:

Written for first-year graduate students studying the Si and III-V compound semiconductors used in integrated circuits, this text discusses the physics of semiconductor devices as they are related to SPICE parameters, circuit applications, inversion layer thickness, drain current flow in field-effect transistors after pinch off, and the subthreshold current in MOSFETs. Also includes figures and examples based on realistic device parameters. Annotation c. by Book News, Inc., Portland, OR (booknews@booknews.com)

Synopsis:

A detailed, modern introduction to semiconductors made in silicon and III-V compounds. This book develops the device physics of pn junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs). Basic concepts from quantum and statistical mechanics are used to describe electrons and holes in semiconductors. Figures and examples based on realistic device parameters are used to illustrate important concepts. The book uses spice tools to analyze complex devices. Design specifications are stressed in building or modeling complicated semiconductor devices.

Table of Contents

* Integrated Circuit Family Tree

* Electrons in Solids

* Carrier Transport and Recombination

* p-n Junctions: I-V Behavior

* p-n Junctions: Reverse Breakdown and Junction Capacitance

* Schottky-Barrier Devices

* MOS Capacitors

* MOS Field-Effect Transistors

* Bipolar Transistors

Appendix I: Introduction to PSPICE

Product Details

ISBN:
9780471171348
Author:
Casey, H. Craig
Publisher:
Wiley
Author:
raig Casey
Author:
Ch
Location:
New York :
Subject:
Engineering - Electrical & Electronic
Subject:
Electronics - Circuits - General
Subject:
Integrated circuits
Subject:
Computer simulation
Subject:
Integrated circuits -- Computer simulation.
Subject:
Electricity
Subject:
Electronics - Semiconductors
Subject:
Compound semiconductors.
Subject:
Electricity-General Electricity
Subject:
Semiconductors
Copyright:
Edition Description:
Includes bibliographical references and index.
Publication Date:
November 1998
Binding:
HARDCOVER
Grade Level:
College/higher education:
Language:
English
Illustrations:
Yes
Pages:
544
Dimensions:
9.66x7.52x.99 in. 2.26 lbs.

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Related Subjects

Science and Mathematics » Chemistry » Biochemistry
Science and Mathematics » Electricity » General Electricity
Science and Mathematics » Electricity » General Electronics

Devices for Integrated Circuits : Silicon III - V Compound Semiconductors (99 Edition) Used Hardcover
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$188.00 In Stock
Product details 544 pages John Wiley & Sons - English 9780471171348 Reviews:
"Synopsis" by , A detailed, modern introduction to semiconductors made in silicon and III-V compounds. This book develops the device physics of pn junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs). Basic concepts from quantum and statistical mechanics are used to describe electrons and holes in semiconductors. Figures and examples based on realistic device parameters are used to illustrate important concepts. The book uses spice tools to analyze complex devices. Design specifications are stressed in building or modeling complicated semiconductor devices.
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