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Insulated Gate Bipolar Transistor Igbt Theory and Design (IEEE Press Series on Micorelectronic Systems)

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Insulated Gate Bipolar Transistor Igbt Theory and Design (IEEE Press Series on Micorelectronic Systems) Cover

 

Synopses & Reviews

Publisher Comments:

A comprehensive and state-of-the-art resource for the design and fabrication of IGBT

Semiconductor devices, particularly the insulated gate bipolar transistor (IGBT), form the heart of the power electronics industry and play a pivotal role in the regulation and distribution of energy in the world. Since its conception as a switching device, improvements and innovative design ideas have established IGBT as a rugged contender in the competitive electronics field.

Insulated Gate Bipolar Transistors (IGBT): Theory and Design covers basic theory and design aspects of IGBTs, including the selection of silicon, achieving targeted specifications through device and process design, and device packaging. After laying the groundwork in MOS and bipolar disciplines, the author constructs the foundation of power device physics necessary for clearly understanding the subject matter, including chapters on:

  • Non-punchthrough, punchthrough, vertical double diffused MOSFET and trench-gate IGBTs; improved lateral and novel IGBT structures; and emerging technologies
  • Steady-state and dynamic operation, and soft switching performance; safe operating area and reliability tests of IGBT
  • IGBT physics, device and circuit models
  • IGBT unit cell design and latching suppression techniques
  • IGBT fabrication steps and process design
  • IGBT power modules

Unique in focusing on IGBT in its entirety, this book will be an invaluable resource for engineering students and professionals alike.

Book News Annotation:

Khanna (Central Electronics Engineering Research Institute, Pilani, India) has some 23 years of experience in device, process design, and fabrication of power semiconductor devices. His text focuses on the physics and technology of insulated gate bipolar transistor (IGBT), but also incorporates devices that work in harmony resulting in IGBT characteristics, including PIN diode, bipolar transistor, bipolar thyristor, and power DMOS-FET properties. Written at a tutorial level for graduate and postgraduate students in power device courses in electrical and electronics engineering and microelectronics, Khanna's text also includes specialist design information for practicing engineers and scientists. Annotation (c)2003 Book News, Inc., Portland, OR (booknews.com)

Synopsis:

A comprehensive coverage of the design and fabrication of insulated gate bipolar transistors (IGBT), starting from the fundamentals of MOS and bipolar physics, through IGBT operation, device and process design, to power modules and new IGBT structures.

Synopsis:

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.
  • All-in-one resource
  • Explains the fundamentals of MOS and bipolar physics.
  • Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Synopsis:

Semiconductor devices form the heart of the power electronics industry and play a pivotal role in the regulation and distribution of energy in the world. The insulated gate bipolar transistor (IGBT), which synergizes the strengths of MOS and bipolar technologies, is the most popular device in the medium power and medium frequency rang for appliance control, uninterruptible power supplies and motor drives. This book covers the theory and design aspects of IGBTs, starting from the selection of starting silicon through device and process design for achieving targeted specifications, to the device packaging.

About the Author

VINOD KUMAR KHANNA, PhD, is a senior scientist working in the solid-state devices division of Central Electronics Engineering Research Institute in Pilani, India. He has been extensively involved for more than twenty years in device, process design and fabrication of power semiconductor devices. He received his PhD in Physics from Kurukshetra University in 1988. A Fellow of the Institution of Electronics and Telecommunication Engineers and a lifetime member of several scientific and professional organizations, Dr. Khanna has published over thirty research papers in international journals and conference proceedings and written two previous books entitled, Handbook of Electrical & Electronics Engineering Fundamentals, and Digital Signal Processing, Telecommunications & Multimedia Technology.

Table of Contents

Preface.

Power Device Evolution and the Advert of IGBT.

IGBT Fundamentals and Status Review.

MOS Components of IGBT.

Bipolar Components of IGBT.

Physics and Modeling of IGBT.

Latch-Up of Parasitic Thyristor in IGBT.

Design Considerations of IGBT Unit Cell.

IGBT Process Design and Fabrication Technology.

Power IGBT Modules.

Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies.

IGBT Circuit Applications.

Index.

Product Details

ISBN:
9780471238454
Author:
Khanna, Vinod Khamar
Publisher:
Wiley-IEEE Press
Author:
Khanna, V. K.
Author:
Khanna, Vinod Kumar
Author:
Khanna
Location:
Piscataway, NJ
Subject:
General
Subject:
Engineering - Electrical & Electronic
Subject:
Electronics - Circuits - General
Subject:
Electronics - Transistors
Subject:
Insulated gate bipolar transistors
Subject:
Electricity
Subject:
Components & Devices
Subject:
Electricity-General Electricity
Copyright:
Edition Description:
WOL online Book (not BRO)
Series:
IEEE Press Series on Micorelectronic Systems
Series Volume:
v. 5
Publication Date:
August 2003
Binding:
Electronic book text in proprietary or open standard format
Grade Level:
Professional and scholarly
Language:
English
Illustrations:
Yes
Pages:
648
Dimensions:
9.48x6.36x1.36 in. 2.27 lbs.

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Related Subjects

» Reference » Science Reference » Technology
» Science and Mathematics » Electricity » General Electricity
» Science and Mathematics » Electricity » General Electronics

Insulated Gate Bipolar Transistor Igbt Theory and Design (IEEE Press Series on Micorelectronic Systems) New Hardcover
0 stars - 0 reviews
$190.25 In Stock
Product details 648 pages John Wiley & Sons - English 9780471238454 Reviews:
"Synopsis" by , A comprehensive coverage of the design and fabrication of insulated gate bipolar transistors (IGBT), starting from the fundamentals of MOS and bipolar physics, through IGBT operation, device and process design, to power modules and new IGBT structures.
"Synopsis" by , A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.
  • All-in-one resource
  • Explains the fundamentals of MOS and bipolar physics.
  • Covers IGBT operation, device and process design, power modules, and new IGBT structures.
"Synopsis" by , Semiconductor devices form the heart of the power electronics industry and play a pivotal role in the regulation and distribution of energy in the world. The insulated gate bipolar transistor (IGBT), which synergizes the strengths of MOS and bipolar technologies, is the most popular device in the medium power and medium frequency rang for appliance control, uninterruptible power supplies and motor drives. This book covers the theory and design aspects of IGBTs, starting from the selection of starting silicon through device and process design for achieving targeted specifications, to the device packaging.
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