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25 Remote Warehouse Physics- Crystallography

Defects in SiO2 and Related Dielectrics: Science and Technology: Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000

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Defects in SiO2 and Related Dielectrics: Science and Technology: Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Cover

 

Synopses & Reviews

Publisher Comments:

Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.

Table of Contents

Preface. Structure and Topology. Defect-free vitreous networks: The idealised structure of SiO2 and related glasses; A.C. Wright. Topology and topological disorder in silica; L.W. Hobbs, X. Yuan. Bulk Defects. Optical properties of defects in silica; L. Skuja. The natures of point defects in amorphous silicon dioxide; D.L. Griscom. Ab initio theory of point defects in SiO2; G. Pacchioni. A demi-century of magnetic defects in alpha-quartz; J.A. Weil. Interaction of SiO2 glasses with high energy ion beams and vacuum UV excimer laser pulses; H. Hosono, K. Kawamura. Excitons, localized states in silicon dioxide and related crystals and glasses; A.N. Trukhin. Gamma rays induced conversion of native defects in natural silica; F.M. Gelardi, S. Agnello. Ge and Sn doping in silica: structural changes, optically active defects, paramagnetic sites; A. Paleari. Computational studies of self-trapped excitons in silica; L.R. Corrales, et al. Surface Defects. Defects on activated silica surface; V.A. Radzig. Ab-initio molecular dynamics simulation of amorphous silica surface; M. Bernasconi. Bragg Grating. periodic UV-induced index modulations in doped-silica optical fibers: formation and properties of the fiber Bragg grating; C.G. Askins. Bulk silicas prepared by low presssure plasma CVD: formation of structure and point defects; K.M. Golant. Change of spectroscopic and structural properties of germanosilicate glass uner mechanical compression and UV irradiation; V.M. Machinsky. UV photoinduced phenomena in oxygen-deficient silica glasses; A. Rybaltovskii. One- and two-quantum UV photo-reactions in pure and doped silica glasses. 2. Germanium oxygen deficient centers (GODC). V.N. Bagratashvili, et al. Photoinduced refractive index change and second harmonic generation in MCVD germanosilicate core fibers fabricated in reduced (nitrogen and helium) atmospheres; E.M. Dianov, et al. Si/SiO2 Interface and Gate Dielectrics. Molecular hydrogen interaction kinetics of interfacial Si dangling bonds in thermal (111)Si/SiO2. An electron spin resonance saga; A.L. Stesmans. Ultrathin oxide films for advanced gate dielectrics applications Current progress and future challenges; E.P. Gusev. SiC/SiO2 interface defects; V.V. Afanas'ev. Point defects in Si-SiO2 systems: current understanding; S.P. Karna, et al. Index.

Product Details

ISBN:
9780792366850
Editor:
Pacchioni, Gianfranco
Editor:
Griscom, David L.
Author:
Pacchioni, G.
Author:
Griscom, David L.
Author:
Skuja, L.
Author:
Skuja, Linards
Author:
Griscom, D. L.
Author:
Pacchioni, Gianfranco
Editor:
Griscom, David L.
Publisher:
Springer
Location:
Dordrecht, Netherlands
Subject:
General
Subject:
Material Science
Subject:
Crystals
Subject:
Crystallography
Subject:
Defects
Subject:
Silica
Subject:
Crystals -- Defects.
Subject:
Silica - Electric properties
Subject:
Characterization and Evaluation of Materials
Subject:
Condensed matter physics
Subject:
Physics-Crystallography
Copyright:
Edition Description:
Book
Series:
Nato Science Series II: (closed)
Series Volume:
02
Publication Date:
20001231
Binding:
HARDCOVER
Language:
English
Illustrations:
Yes
Pages:
632
Dimensions:
240 x 160 mm 2340 gr

Related Subjects

Health and Self-Help » Health and Medicine » General
Health and Self-Help » Health and Medicine » General Medicine
Science and Mathematics » Environmental Studies » Environment
Science and Mathematics » Materials Science » General
Science and Mathematics » Physics » Astrophysics
Science and Mathematics » Physics » Crystallography

Defects in SiO2 and Related Dielectrics: Science and Technology: Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 New Hardcover
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Product details 632 pages Kluwer Academic Publishers - English 9780792366850 Reviews:
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