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Other titles in the Materials Science and Process Technology series:
Wide Bandgap Semiconductors: Growth, Processing and Applications (Materials Science and Process Technology Series)by Stephen J. Pearton
Synopses & Reviews
Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.
Book News Annotation:
Overviews wide band gap semiconductors made from GaN, SiC, diamond and ZnSe for commercial applications in high temperature/high power electronics and blue/green light emission. The 11 contributions discuss growth and contacts of II-VI compounds, processing techniques, and materials analysis. Potential uses in HDTV, power conditioning devices, and high power microwave are also explored. Example topics are epitaxial growth of II-VI compounds by MOVPE, dry etching of SiC, plasma etching of III-V nitrides, ion implantation, rare earth impurities, hydrogen incorporation, and secondary ion mass spectrometry (SIMS) analysis.
Annotation c. Book News, Inc., Portland, OR (booknews.com)
The first available textual reference to treat the manufacture and use of high temperature/high power family semiconductors, this book details the growth, processing and device applications for the wide gap semiconductor technology. Covers new applications in high temperature/high power electronics for power switching avionics and defense short wavelength emitters.
About the Author
Stephen J. Pearton is a professor in the Department of Materials Science Engineering at the University of Florida, Gainesville. Dr. Pearton received his PhD from the University of Tasmania, Australia, and is a fellow of the Electrochemical Society and a senior member of the IEEE. He is a contributor to four books and has organized symposia on wide bandgap semiconductors for the Materials Research Society, the Electrochemical Society, and the American Vacuum Society.
Table of Contents
1. Doping Limits and Bandgap Engineering in Wide Gap II-VI Compounds
Ab Initio Calculations of Doping Limitations | The Fermi Level Pinning Model | Doping and Band Structure Engineering | Ohmic Contact to p-ZnSe
2. Epitaxial Growth of II-VI Compounds by MOVPE
Binary Compounds | Ternary and Quaternary Compounds
3. Ohmic Contacts to II-VI and III-V Compound Semiconductors
Ohmic Contacts to GaAs | Ohmic Contacts to InP | Ohmic Contacts to GaN | Ohmic Contacts to ZnSe
4. Dry Etching of SiC
Requirements of Dry Etching in SiC Device Fabrication | Chemistry of SiC Dry Etching | Methods for Plasma-Assisted Etching of SiC | Profile and Morphology Control with ECR Etching
5. Processing of Silicon Carbide for Devices and Circuits
Silicon Carbide Device Processing | Survey of SiC Devices | SiC Circuits and Sensors
6. Plasma Etching of III-V Nitrides
Etch Techniques | Plasma Chemistry | Pressure | Ion Energy and Plasma Density | Temperature Dependence | Growth Technique | Etch Profile, Morphology, and Stoichiometry | Plasma Induced Damage | Plasma Etch Applications
7. Ion Implantation in Wide Bandgap Semiconductors
Implantation Isolation | Implantation Doping | Impurity Redistribution | Implantation Damage: Creation and Removal | Device Demonstrations
8. Rare Earth Impurities in Wide Gap Semiconductors
Incorporation of RE Atoms in Wide Gap Semiconductors | RE 3+ Photoluminescence | Electrical Activation of RE 3+ Ions
9. SIMS Analysis of Wide Bandgap Semiconductors
Wide Bandgap Materials Discussed Here | Secondary Ion Mass Spectrometry (SIMS) | SIMS Issues | Quantification | Diamond | SiC | ZnSe | LiNbO3 (and LiTaO) | Group III-Nitrides
10. Hydrogen in Wide Bandgap Semiconductors
Hydrogen Incorporation in Wide Bandgap Semiconductors | Hydrogen in GaN | Hydrogen in SiC | Diamond | II-VI Compounds
11. Diamond Deposition and Characteristics
Properties | Fabrication | Modification | Characterization | Applications
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