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Q&A | February 27, 2014

Rene Denfeld: IMG Powell’s Q&A: Rene Denfeld



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Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion (Engineering Materials and Processes)

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Synopses & Reviews

Publisher Comments:

The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, Point defects, as well as defect pairs, complexes and clusters. A crucial reference for materials scientists, surface scientists, electrical engineers, and solid-state physicists looking to approach the topic of defect charging from an integrated chemical engineering perspective. Researchers and industrial practitioners alike will find its content invaluable for device and process optimization.

Synopsis:

"Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.

Synopsis:

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of "defect engineering". For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

About the Author

Edmund Seebauer is currently Head of Chemical and Biomolecular Engineering at the University of Illinois at Urbana-Champaign. Since 1987 he has been the Chair or co-Chair of numerous sessions on surface chemisty, materials chemistry and microelectronics fabrication for national meetings of AIChE, AVS and MRS. Meredith Kratzer is working towards a PhD in Chemical & Biomolecular Engineering at the University of Illinois at Urbana-Champaign. She received her B.S. (cum laude) in Chemical Engineering from Cornell University.

Table of Contents

Introduction Fundamentals of Defect Ionization and Transport Experimental and Computational Characterization Trends in Charged Defect Behavior Intrinsic Defects: Structure Intrinsic Defects: Ionization Thermodynamics Intrinsic Defects: Diffusion Extrinsic Defects

Product Details

ISBN:
9781848820586
Author:
Seebauer, Edmund G.
Publisher:
Springer
Author:
Kratzer, Meredith C.
Subject:
Optics
Subject:
Solid State Physics
Subject:
Mechanical
Subject:
Semiconductors -- Defects.
Subject:
Physics-Optics
Subject:
Catalysis
Subject:
Defect
Subject:
Diffusion
Subject:
Microelectronics
Subject:
semiconductor
Subject:
Spectroscopy and Microscopy
Subject:
Optical and Electronic Materials
Subject:
Continuum Mechanics and Mechanics of Materials
Subject:
Electronics and Microelectronics, Instrumentation
Subject:
Engineering Thermodynamics, Heat and Mass Transfer
Copyright:
Edition Description:
2009
Series:
Engineering Materials and Processes
Publication Date:
20081231
Binding:
HARDCOVER
Language:
English
Illustrations:
Y
Pages:
308
Dimensions:
235 x 155 mm 625 gr

Related Subjects

Engineering » Mechanical Engineering » General
Health and Self-Help » Health and Medicine » Medical Specialties
Science and Mathematics » Electricity » General Electronics
Science and Mathematics » Materials Science » General
Science and Mathematics » Physics » Optics
Science and Mathematics » Physics » Solid State Physics
Science and Mathematics » Physics » Spectroscopy

Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion (Engineering Materials and Processes) New Hardcover
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Product details 308 pages Springer - English 9781848820586 Reviews:
"Synopsis" by , "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.
"Synopsis" by , Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of "defect engineering". For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
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