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25 Remote Warehouse Physics- Solid State Physics

This title in other editions

Other titles in the Engineering Materials and Processes series:

Charged Semiconductor Defects

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Charged Semiconductor Defects Cover

 

Synopses & Reviews

Publisher Comments:

The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, Point defects, as well as defect pairs, complexes and clusters. A crucial reference for materials scientists, surface scientists, electrical engineers, and solid-state physicists looking to approach the topic of defect charging from an integrated chemical engineering perspective. Researchers and industrial practitioners alike will find its content invaluable for device and process optimization.

Synopsis:

"Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.

Synopsis:

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of "defect engineering". For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

About the Author

Edmund Seebauer is currently Head of Chemical and Biomolecular Engineering at the University of Illinois at Urbana-Champaign. Since 1987 he has been the Chair or co-Chair of numerous sessions on surface chemisty, materials chemistry and microelectronics fabrication for national meetings of AIChE, AVS and MRS. Meredith Kratzer is working towards a PhD in Chemical & Biomolecular Engineering at the University of Illinois at Urbana-Champaign. She received her B.S. (cum laude) in Chemical Engineering from Cornell University.

Table of Contents

Introduction Fundamentals of Defect Ionization and Transport Experimental and Computational Characterization Trends in Charged Defect Behavior Intrinsic Defects: Structure Intrinsic Defects: Ionization Thermodynamics Intrinsic Defects: Diffusion Extrinsic Defects

Product Details

ISBN:
9781849968201
Author:
Seebauer, Edmund G.
Publisher:
Springer
Author:
Kratzer, Meredith C.
Subject:
Physics-Solid State Physics
Subject:
Solid State Physics
Subject:
Catalysis
Subject:
Defect
Subject:
Diffusion
Subject:
Microelectronics
Subject:
semiconductor
Subject:
Spectroscopy and Microscopy
Subject:
Optical and Electronic Materials
Subject:
Continuum Mechanics and Mechanics of Materials
Subject:
Electronics and Microelectronics, Instrumentation
Subject:
Engineering Thermodynamics, Heat and Mass Transfer
Edition Description:
Softcover reprint of hardcover 1st ed. 2009
Series:
Engineering Materials and Processes
Publication Date:
20101031
Binding:
TRADE PAPER
Language:
English
Pages:
308
Dimensions:
235 x 155 mm 466 gr

Related Subjects

Reference » Science Reference » Technology
Science and Mathematics » Electricity » General Electronics
Science and Mathematics » Physics » Solid State Physics
Science and Mathematics » Physics » Spectroscopy
Science and Mathematics » Physics » Thermodynamics

Charged Semiconductor Defects New Trade Paper
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$271.50 In Stock
Product details 308 pages Springer - English 9781849968201 Reviews:
"Synopsis" by , "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.
"Synopsis" by , Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of "defect engineering". For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
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