Synopses & Reviews
Based upon practical experience, it treats the entire joining technology in the electronics production cycle as it relates to soldering--including cleaning, statistical quality control, through-hole and S M joining. Promotes an understanding of the complex interrelations of various process parameters to lead readers to an analysis and resolution of this manufacturing procedure.
Synopsis
Addresses electromigration failure modes in electronics covering both theory and experiments. Reviews silicon and GaAs technologies. Various rate controlling details are summarized including an investigation of temperature dependence. Concludes with a discussion regarding current status and future plans for electromigration resistant advanced metallization systems for VLSI.
Synopsis
Addresses electromigration failure modes in electronics covering both theory and experiments. Reviews silicon and GaAs technologies. Various rate controlling details are summarized including an investigation of temperature dependence. Concludes with a discussion regarding current status and future plans for electromigration resistant advanced metallization systems for VLSI.
Table of Contents
Reliability and Electromigration Degradation of GaAs Microwave Monolithic Integrated Circuits (A. Christou).
Simulation and Computer Models for Electromigration (P. Tang).
Temperature Dependencies on Electromigration (M. Pecht & P. Lall).
Electromigration and Related Failure Mechanisms in VLSI Metallizations (A. Christou & M. Peckerar).
Metallic Electromigration Phenomena (S. Krumbein).
Theoretical and Experimental Study of Electromigration (J. Zhao).
GaAs on Silicon Performance and Reliability (P. Panayotatos, et al.).
Electromigration and Stability of Multilayer Metal-Semiconductor Systems on GaAs (A. Christou).
Electrothermomigration Theory and Experiments in Aluminum Thin Film Metallizations (A. Christou).
Reliable Metallization for VLSI (M. Peckerar).
Index.