Synopses & Reviews
Thin Film Ferroelectric Materials and Devices is a compilation of current research and development in two very important ferroelectric device technologies, namely ferroelectrics for Dynamic Random Access Memories (DRAMs) and Non-Volatile Ferroelectric Random Access Memories (NV-FRAMs). Given the rapid pace of development and the broad scope of the general topic of ferroelectric materials, readers will benefit from such a focused presentation. The primary focus of Thin Film Ferroelectric Materials and Devices is to expound the materials and device aspects of these technologies. All the chapters have been written by leaders in their fields. Therefore, each chapter provides a comprehensive treatment of a specific topic of relevance to these two technologies. Thin Film Ferroelectric Materials and Devices will be of great value to materials and device scientists, device and process engineers, students, and postdoctoral associates. Furthermore, this compilation will serve as a concise introduction for new entrants to this exciting field.
Table of Contents
Preface. 1. (Ba,Sr)TiO3 Thin Films for DRAM's; S. Summerfelt. 2. (Ba,Sr)TiO3 Films and Process Integration for DRAM Capacitor; N. Mikami. 3. Elastic Domains in Ferroelectric Epitaxial Films; A. Roytburd. 4. Study of Growth Processes in Ferroelectric Films and Layered Heterostructures via in situ, Real-Time Ion Beam Analysis; O. Auciello, et al. 5. Layered Perovskite Thin Films and Memory Devices; J.F. Scott. 6. Pb(Zr,Ti)O3 Based Thin Film Ferroelectric Nonvolatile Memories; B.A. Tuttle. 7. Chemical Vapor Deposition of Ferroelectric Thin Films; C.M. Foster. 8. Degradation Mechanisms and Reliability Issues for Ferroelectric Thin Films; D. Dimos, et al. 9. Low Voltage Performance in Lead Based Ferroelectric Thin Film Memory Elements with (La,Sr)CoO3 Electrodes; S. Aggarwal, et al. Index.