Amorphous and Crystalline Silicon Carbide II: Recent Developments Proceedings of the 2nd International Conference, Santa Clara, Ca, December 15--16, 1

This comprehensive survey presents the latest results of studies of SiC in its amorphous, polycrystalline and microcrystalline forms. New methods of preparation and characterization are explained and devices and applications described, for example: - excimer laser processing of SiC - low temperature epitaxial growth of cubic SiC using a gas source MBE process - the use of NaOH-KOH eutectic etching to reveal crystalline defects in -SiC - results of investigations of microstructure and interfaces of a-SiC with c-SiC - new devices: SiC MOSFETs and buried gate JFETs - blue LEDs using 6H-SiC bulk crystals - a new process for SiC/Si HBTs - high operating-temperature and opto-electronic applications The newly emerging technology of diamond thin films is also discussed.

This volume contains written versions of the papers presented at the Second Inter- national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem- ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in- ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.