Amorphous and Crystalline Silicon Carbide IV: Proceedings of the 4th International Conference, Santa Clara, Ca, October 9-11, 1991

Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.

The contributions contained in this proceedings volume provide a comprehensive overview of recent research progress achieved on silicon carbide and related materials in amorphous, microcrystalline, polycrystalline, and crystalline forms. They report the latest results and applications and present the most up-to-date information essential for scientists, eningeers, and students.