Semiconductor Interfaces: Formation and Properties: Proceedings of the Workkshop, Les Houches, France February 24-March 6, 1987

The trend towards miniaturization of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role upon semiconductor interfaces. Great advances have recently been made in the production of new thin-film materials and in the characterization of their interfacial properties down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures given by specialists at the International Winter School on "Semiconductor Interfaces: Formation and Properties", which was held at the Centre de Physique des Houches from 24 February to 6 March, 1987. The following topics are particularly emphasised: - Interface formation, including molecular beam epitaxy, the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. - Characterization down to the atomic scale using techniques such as STM, HRTEM, SEXAFS and SEELFS. - Specific physical properties of the interfaces and their prospective device applications.

Contents: Introduction.- Experimental Study of the Formation of Semiconductor Interfaces.- Structural Characterization of the Interfaces.- Electronic Properties of Interfaces.- Optical and Vibrational Properties of Interfaces.- Interfaces: Present Status and Perspectives.- Index of Contributors.