Synopses & Reviews
This volume reviews the latest experimental and theoretical studies in the field of ZnO. The chapters reflect the topics that were discussed during the NATO Advanced Research Workshop, which brought together researchers from Nato countries, Russia, Ukraine, and Kazakhstan to encourage cross fertilization and wider dissemination of the advances in this important research field. Fundamental issues such as growth of ZnO, structural, optical and electric properties, the role of the hydrogen and more were discussed.
Synopsis
Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on "Zinc oxide as a material for micro- and optoelectronic applications," held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV.
Table of Contents
Contributing Authors. Preface. Part I: ZnO bulk and layer growth: The Scope of Zinc Oxide Bulk Growth; R. Triboulet et al. Growth Mechanism of ZnO Layers; A.Kh. Abduev et al. Kinetics of High-Temperature Defect Formation in ZnO in the Stream of Oxygen Radicals; M.B. Kotlyarevsky et al. Part II: Electrical, Optical, and Structural Properties: Electrical Properties of ZnO; David C. Look et al. Electrical Properties of ZnO Thin Films and Single Crystals; M. Grundmann et al. Structure, Morphology, and Photoluminescence of ZnO Films; V.A. Karpina. Optics and Spectroscopy of Point Defects in ZnO; Vladimir Nikitenko. Whispering Gallery Modes in Hexagonal Zinc Oxide Micro- and Nanocrystals; T. Nobis et al. Properties of Dislocations in Epitaxial ZnO Layers Analyzed by Transmission Electron Microscopy; E. Muller et al. Part III: Role of Hydrogen: Muon Spin Rotation Measurements on Zinc Oxide; E.A. Davis. Hydrogen Donors in Zinc Oxide; M.D. McCluskey and S.J. Jokela. Hydrogen-Related Defects in Zno Studied by JR Absorption Spectroscopy; E.V. Lavrov et al. Influence of the Hydrogen Concentration on H Bonding in Zinc Oxide; N.H. Nickel. Part IV: Fundamental properties: Valence Band Ordering and Magneto-Optical Properties of Free and Bound Excitons in ZnO; A.V. Rodina et al. Fundamental Optical Spectra and Electronic Structure of Zno Crystals; V. Val et al. Photo-Induced Localized Lattice Vibrations in ZnO Doped with 3d Transition Metal Impurities; Alexey Kislov. Part V: Device applications: ZnO Window Layers for Solar Cells; W. Fuhs. ZnO/AlGaN Ultraviolet Light Emitting Diodes; E.V. Kaunina et al. ZnO Transparent Thin-Film Transistor Device Physics; J.F. Wager. Zinc Oxide Thin Film Transistors; E. Fortunato et al. Index