Synopses & Reviews
Molecular beam epitaxy was initially developed by J.R.Arthur and A.Y. Choover 20years ago for growth of GaAs and GaAs-AlxGa1-xAs heterostructures. It has subsequently been extended to an ever-widening variety of materials while maintaining key advantages over other techniques of epitaxial film growth such as chemical vapor deposition (CVD), liquid phase epitaxy (LPE), metal-organic vapor phase epitaxy (MOVPE) and related techniques. These advantages include the ability to control growth reproducibly to atomic monolayer dimensions and to monitor the growth process in real time. For example, the ultra-high vacuum growth environment of MBE makes it possible to study the dynamics of the growth process itself using modulated molecular beam techniques and RHEED (reflection high energy electron diffraction). In addition, other in situ techniques such as XPD (x-ray photoelectron diffraction) can be used to examine the formation of interfaces and film growth modes.
In this volume the Editor and Contributors have set out to describe the use of MBE for a range of key materials systems which are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Review
"...the basic facts of the technique are laid out...well-known researchers present accounts of the use of MBE for making different types of materials..."-JOM.
Synopsis
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Table of Contents
The Technology and Design of Molecular Beam Epitaxy Systems
Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs
Gas-Source Molecular Beam Epitaxy: GaxIn1-xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device Properties
Molecular Beam Epitaxy of Wide Gap II-VI Semiconductor Heterostructures
Elemental Semiconductor HeterostructuresùGrowth, Properties, and Applications
MBE Growth of High Tc Superconductors
MBE Growth of Artificially-Layered Magnetic Metal Structures
Reflection High Energy Electron Diffraction Studies of the Dynamics of Molecular Beam Epitaxy
Acknowledgments
Appendix: Two-Level Diffraction
References
Index